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Title: The interaction between divacancies and shallow dopants in irradiated Ge:Sn

It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V{sub 2}{sup 0} the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown that the defect, to which the new spectrum corresponds, has hydrogen-like properties. The distances between the lines in the spectrum are in good agreement with those predicted by effective-mass theory. The appearance of Fano resonance in the continuum region in addition to intracenter transitions of the defect was detected. The defect found is identified as SnV{sub 2}{sup 0}Ga. The binding energy for the ground state of the SnV{sub 2}{sup 0}Ga centers has been estimated.
Authors:
; ;  [1] ; ;  [2]
  1. Institute of Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 46, 03028 Kiev (Ukraine)
  2. Leibniz Institute for crystal Growth, Max-Born Str. 2, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22263724
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTRA; ANNEALING; BINDING ENERGY; DEFECTS; DOPED MATERIALS; EFFECTIVE MASS; GALLIUM; GROUND STATES; HYDROGEN; INTERACTIONS; IRRADIATION; RESONANCE