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Title: Transition dynamics for Mu acceptor states in Si{sub 1–x}Ge{sub x} alloys

We use the longitudinal field muon spin relaxation technique to observe charge-state and site-change transitions of muonium in Si{sub 1–x}Ge{sub x} alloys. In this project, we examine the temperature and magnetic field dependences of the relaxation rates for Si{sub 1–x}Ge{sub x} samples (x = 0.77, 0.81, and 0.84), in the composition range where the acceptor level lies within the band gap. This study particularly focuses on the relaxation rates for Si{sub 0.19}Ge{sub 0.81} to identify various cyclic charge-state and site-change processes as a function of both temperature and magnetic field. We extract the paramagnetic hyperfine constant and the relevant transition rate parameters for site changes and charge-state transitions involving Mu acceptor states for this sample. At small x, a site change dominates the transition out of the neutral T-site acceptor state, while in higher Ge content alloys hole ionization becomes the dominant transition out of the Mu{sub T}{sup 0}.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Texas Tech University, Lubbock, TX 79409-1051 (United States)
  2. Istanbul University, Istanbul (Turkey)
  3. Arkansas State University, Jonesboro, AR 72410 (United States)
  4. Institute of Materials Research, Tohoku University (Japan)
Publication Date:
OSTI Identifier:
22263721
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; CHARGE STATES; IONIZATION; MAGNETIC FIELDS; MUON SPIN RELAXATION; MUONIUM; PARAMAGNETISM