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Title: Vacancy complexes in Sb-doped SnO{sub 2}

MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Department of Applied Physics, Aalto University, 00076 Aalto (Finland)
  2. Department of Materials, University of California, Santa Barbara, 93106 California (United States)
  3. Leibniz Institute for Crystal Growth, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22263716
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPLEXES; DOPED MATERIALS; POSITRONS; SPECTROSCOPY; THIN FILMS; TIN OXIDES; VACANCIES