Vacancy complexes in Sb-doped SnO{sub 2}

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865672· OSTI ID:22263716

Korhonen, E.; Tuomisto, F. ^[1]; Bierwagen, O.; Speck, J. S.; White, M. E. ^[2]; Galazka, Z. ^[3]

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1. Department of Applied Physics, Aalto University, 00076 Aalto (Finland)
2. Department of Materials, University of California, Santa Barbara, 93106 California (United States)
3. Leibniz Institute for Crystal Growth, 12489 Berlin (Germany)

MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

• OSTI ID: 22263716
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPLEXES
DOPED MATERIALS
POSITRONS
SPECTROSCOPY
THIN FILMS
TIN OXIDES
VACANCIES