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Title: Experimental evidence of V{sub O}−Zn{sub i} complex to be intrinsic donor in bulk ZnO

Theoretical evidence of V{sub O}−Zn{sub i} to be a native donor in bulk ZnO has been under debate. To resolve the issue, we annealed several pieces of as grown zinc rich n-type ZnO thin film having N{sub D} ∼ 3.26 × 10{sup 17} cm{sup −3} grown by molecular beam epitaxy on Si (001) substrate in oxygen environment at 500°C – 800°C, keeping a step of 100°C for one hour, each. Room temperature Hall measurements demonstrated that free donor concentration decreased exponentially and Arrhenius plot yielded activation energy to be 1.2±0.02 eV. This value is in an agreement with the theoretically reported activation energy of V{sub O}−Zn{sub i} donor complex in ZnO.
Authors:
;  [1] ; ; ;  [2]
  1. Department of Physics, The Islamia University of Bahawalpur 63100 (Pakistan)
  2. Department of Electrical and Computer Engineering, University of North Carolina Charlotte, NC 28223 (United States)
Publication Date:
OSTI Identifier:
22263714
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANNEALING; MOLECULAR BEAM EPITAXY; OXYGEN; SUBSTRATES; THIN FILMS; ZINC OXIDES