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Title: Defect-induced magnetism in cobalt-doped ZnO epilayers

We used a synergic Co-edge X-ray absorption spectroscopy (XAS) and density functional theory calculations approach to perform a study of defects which could account for the room temperature ferromagnetism of ZnCoO, an oxide of great potential interest in semiconductor spintronics. Our results suggest that a key role is played by specific defect complexes in which O vacancies are located close to the Co atoms. Extended defects such as Co clusters have a marginal function, although we observe their formation at the epilayer surface under certain growth conditions. We also show preliminary results of the study of hydrogen-induced defects in ZnCoO epilayers deliberately hydrogen irradiated via a Kaufman source. Hydrogen was in fact predicted to mediate a ferromagnetic spin-spin interaction between neighboring magnetic impurities.
Authors:
;  [1] ; ; ; ;  [2] ; ;  [3]
  1. Synchrotron SOLEIL, Saint-Aubin (France)
  2. CNR, Monterotondo Stazione (Italy)
  3. Department of Physics, Sapienza Università di Roma (Italy)
Publication Date:
OSTI Identifier:
22263710
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; COBALT; DEFECTS; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; FERROMAGNETISM; HYDROGEN; IRRADIATION; J-J COUPLING; SEMICONDUCTOR MATERIALS; X-RAY SPECTROSCOPY; ZINC OXIDES