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Title: Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.
Authors:
; ; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy)
  2. University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy)
  3. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)
Publication Date:
OSTI Identifier:
22263707
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; DISLOCATIONS; GALLIUM NITRIDES; OPTICAL ACTIVITY; QUANTUM WELLS; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPY; SURFACES