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Title: Charge transfer in Fe-doped GaN: The role of the donor

Several nitride-based device structures would benefit from the availability of high quality, large-area, freestanding semi-insulating GaN substrates. Due to the intrinsic n-type nature of GaN, however, the incorporation of compensating centers such as Fe is necessary to achieve the high resistivity required. We are using electron paramagnetic resonance (EPR) to explore charge transfer in 450 um thick GaN:Fe plates to understand the basic mechanisms related to compensation so that the material may be optimized for device applications. The results suggest that the simple model based on one shallow donor and a single Fe level is insufficient to describe compensation. Rather, the observation of the neutral donor and Fe3+ indicates that either the two species are spatially segregated or additional compensating and donor defects must be present.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Physics, University of Alabama at Birmingham, 1300 University Blvd., CH 310, Birmingham, Alabama 35294-1170 (United States)
  2. Kyma Technologies, 8829 Midway West Rd., Raleigh, North Carolina 27617 (United States)
Publication Date:
OSTI Identifier:
22263704
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRON SPIN RESONANCE; EQUIPMENT; GALLIUM NITRIDES; SUBSTRATES