The effect of dipole boron centers on the electroluminescence of nanoscale silicon p{sup +}−n junctions
- Ioffe Physical-Technical Institute, Polytekhnicheskaya 26, 194021, St. Petersburg (Russian Federation)
- St. Petersburg State Polytechnical University, Polytekhnicheskaya 29, 195251, St. Petersburg (Russian Federation)
Nanoscale silicon p{sup +}−;n junctions with very high concentration of boron, 5 10{sup 21} cm{sup −3}, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree of the linear polarization along preferred crystallographic axis which can be controlled by the lateral voltage applied in the plane of the p{sup +}−n junction. Such behavior together with the temperature dependence of the EL intensity is attributed to the presence of the self-compensating dipole boron centers, B{sup +}-B{sup −}, with negative correlation energy which are identified using the ESR technique in the nanoscale silicon p{sup +}−n junctions heavily doped with boron. The model of the recombination process though the negative-U dipole boron centers controlling the optical properties of the nanoscale silicon p{sup +}−n junctions is proposed.
- OSTI ID:
- 22263702
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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