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Title: Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.
Authors:
;  [1] ;  [2] ; ; ;  [3] ; ;  [4]
  1. Dipartimento di Fisica e Astronomia, LENS, CNISM, Università di Firenze (Italy)
  2. Dipartimento di Ingegneria Industriale, Università di Firenze (Italy)
  3. Dipartimento di Ingegneria dell'Informazione, Università di Padova (Italy)
  4. Department Materials Science, University of Cambridge, Cambridge, CB2 3QZ (United Kingdom)
Publication Date:
OSTI Identifier:
22263701
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DENSITY; DISLOCATIONS; EFFICIENCY; GALLIUM NITRIDES; PHOTOLUMINESCENCE; RECOMBINATION; SPECTRA; TEMPERATURE RANGE 0400-1000 K; TIME RESOLUTION