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Title: Electrically-detected ESR in silicon nanostructures inserted in microcavities

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ- barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ;  [3]
  1. Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
  2. Technische Universitaet Berlin, D-10623, Berlin (Germany)
  3. Petersburg State Polytechnical University, Polytekhnicheskaya 29, 195251 St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22263697
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; ELECTRON SPIN RESONANCE; EMISSION; MAGNETORESISTANCE; POINT DEFECTS; QUANTUM WELLS; SILICON; SUPERCONDUCTORS