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Title: Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.
Authors:
; ; ; ;  [1]
  1. Ioffe Physical Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya ul., St. Petersburg 194021 (Russian Federation)
Publication Date:
OSTI Identifier:
22263696
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; EMISSION; GALLIUM ARSENIDES; INDIUM ARSENIDES; PULSES; QUANTUM DOTS; SUPERLATTICES