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Title: N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
  2. Lashkaryov Institute of semiconductor physics, NASU (Ukraine)
  3. Lashkaryov Institute of semiconductor physics, NASU, Ukraine and Institute of Physics, AS CR (Czech Republic)
Publication Date:
OSTI Identifier:
22263695
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; BORON; DOPED MATERIALS; ELECTRON SPIN RESONANCE; INTERACTIONS; IRRADIATION; MAGNETORESISTANCE; QUANTUM WELLS; SILICON; SILICON CARBIDES; SPECTRA; TRIPLETS