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Title: Controlling ferromagnetism of (In,Fe)As semiconductors by electron doping

Based on experimental results, using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method and Monte Carlo simulation, we study the mechanism of ferromagnetic behavior of (In,Fe)As. We show that with doped Be atoms occupying in interstitial sites, chemical pair interactions between atoms and magnetic exchange interactions between Fe atoms change due to electron concentration. Therefore, by controlling the doping process, magnetic behavior of (In,Fe)As is controlled and ferromagnetism is observed in this semiconductor.
Authors:
; ;  [1] ;  [2]
  1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)
  2. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
Publication Date:
OSTI Identifier:
22263691
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APPROXIMATIONS; COMPUTERIZED SIMULATION; DOPED MATERIALS; ELECTRONS; EXCHANGE INTERACTIONS; FERROMAGNETISM; MONTE CARLO METHOD; PAIRING INTERACTIONS; SEMICONDUCTOR MATERIALS