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Title: Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism

We simulated the time evolution of electron-lattice coupling mode, and a series of nonradiative carrier captures by a deep-level defect in a semiconductor. For lattice relaxation energy of the order of the band gap, a series of coherent (athermal) electron and hole captures by a defect is possible for high carrier densities, which results in an inflation in the induced lattice vibration, which in turn enhances a defect reaction.
Authors:
; ;  [1]
  1. Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510 (Japan)
Publication Date:
OSTI Identifier:
22263689
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPTURE; CARRIER DENSITY; DEFECTS; ELECTRONS; PHONONS; SEMICONDUCTOR MATERIALS; SIMULATION