Behavior of nitrogen in Si crystal during irradiation and post-annealing
- Tokyo Univ. Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo, 184-8588, Japan and Osaka Prefecture University, 1-2, Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8570 (Japan)
- Kumamoto National College of Technology, 2659-2, Koshi, Kumamoto, 861-1102 (Japan)
- Systems Eng. Inc., 2-29-24, Honkomagome, Bunkyo-ku, Tokyo, 113-0021 (Japan)
- Toray Research Center Inc., 3-3-7, Sonoyama, Otsu, Shiga, 520-8567 (Japan)
- Osaka Prefecture University, 1-2, Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8570 (Japan)
Radiation induced complexes in nitrogen (N) -doped silicon crystal was investigated by highly sensitive infrared absorption spectroscopy. The absorption by N{sub 2} pair was reduced by the electron irradiation in FZ crystals. The absorptions appeared on both sides of N{sub 2} line at 766 cm{sup −1}, at about 725 and 778 cm{sup −1}. By the annealing, N{sub 2} lines recovered a little at 600 °C and mostly at 800 °C. The above new absorption lines reduced by the annealing at lower temperatures and other absorption appeared. In CZ silicon, N{sub 2} lines did not change by the irradiation. Dominant absorption in low carbon FZ silicon was that of C-rich type complexes, VO and I{sub n}C{sub i}O{sub im}(n=0–3, m=0,1). Dominant absorption in the irradiated low carbon CZ silicon was that of C-lean type complexes I{sub n}O{sub 2+mi}(n=1, 2, m=0, 1), and the decrease of C-lean type O{sub 2i} and TDD was observed. By the annealing of CZ Si, VO{sub n} (n=2–4) formation and annihilation was observed.
- OSTI ID:
- 22263688
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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