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Title: Defect studies in MBE grown GaSb{sub 1−x}Bi{sub x} layers

Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb{sub 1−x}Bi{sub x} on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0–0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Applied Physics, Aalto University, P.O.B 11100, FI-00076 Aalto (Finland)
  2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden)
Publication Date:
OSTI Identifier:
22263684
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNIHILATION; DEFECTS; DOPPLER BROADENING; GALLIUM ANTIMONIDES; LAYERS; MOLECULAR BEAM EPITAXY; POSITRONS; SPECTROSCOPY