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Title: Surface defect states in MBE-grown CdTe layers

Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.
Authors:
; ; ; ; ;  [1]
  1. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22263677
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CADMIUM TELLURIDES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DENSITY; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SPECTRA; SURFACES; TRAPS; TUNNEL EFFECT