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Title: Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n{sup +}–p structures

New findings on the formation and annealing of interstitial boron-interstitial oxygen complex (B{sub i}O{sub i}) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of B{sub i}O{sub i}. It has been found that the increase of oxygen content slows the B{sub i}O{sub i} annealing rate down. The activation energy of the B{sub i}O{sub i} dissociation has been determined and it was found that germanium doping does not change the activation energy.
Authors:
 [1] ; ;  [2] ;  [3] ;  [4] ;  [5]
  1. Belarusian State University, Minsk (Belarus)
  2. Scientific-Practical Materials Research Centre of NAS of Belarus (Belarus)
  3. CERN, Geneva (Switzerland)
  4. National Institute of Materials Physics, Magurele (Romania)
  5. Leibniz Institute for Crystal Growth, Berlin (Germany)
Publication Date:
OSTI Identifier:
22263674
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALPHA PARTICLES; ANNEALING; BORON; ELECTRONS; GERMANIUM; IRRADIATION; NITROGEN IONS; OXYGEN; OXYGEN COMPLEXES; SILICON