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Title: Pd-vacancy complex in Ge: TDPAC and ab initio study

Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how residual Pd atoms are integrated into the Ge lattice. Therefore, time-different γ-γ perturbed angular correlation (TDPAC) technique using the {sup 100}Pd(→{sup 100}Rh) nuclear probe has been applied to study the hyperfine interactions of this probe in single crystalline undoped Ge. A Pd-vacancy (Pd-V) complex with a unique interaction frequency of 8.4(2) Mrad/s has been identified. The Pd-V complex has been measured to have a maximum fraction after annealing at 350 °C. Density functional theory calculations have confirmed that the Pd-V complex may have the split-vacancy configuration in Ge, in contrast to the full-vacancy configuration observed in Si.
Authors:
; ;  [1]
  1. School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, UNSW Canberra, PO Box 7916, Canberra BC 2610 (Australia)
Publication Date:
OSTI Identifier:
22263671
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTALLIZATION; DENSITY FUNCTIONAL METHOD; GERMANIUM; INTERACTIONS; MONOCRYSTALS; PALLADIUM; PERTURBED ANGULAR CORRELATION; SEMICONDUCTOR MATERIALS; SILICON