Complexes of self-interstitials with oxygen atoms in Ge

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865613· OSTI ID:22263670

Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G. ^[1]; Abrosimov, N. V.; Riemann, H. ^[2]

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1. Institute of Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 46, 03028 Kiev (Ukraine)
2. Leibniz Institute for crystal Growth, Max-Born Str. 2, D-12489 Berlin (Germany)

Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ∼80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup −1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180–240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup −1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

• OSTI ID: 22263670
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ANNEALING
DISSOCIATION
GERMANIUM
INTERACTIONS
INTERSTITIALS
IRRADIATION
OXYGEN
TEMPERATURE RANGE