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Title: Complexes of self-interstitials with oxygen atoms in Ge

Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ∼80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup −1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180–240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup −1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.
Authors:
; ;  [1] ; ;  [2]
  1. Institute of Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 46, 03028 Kiev (Ukraine)
  2. Leibniz Institute for crystal Growth, Max-Born Str. 2, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22263670
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ANNEALING; DISSOCIATION; GERMANIUM; INTERACTIONS; INTERSTITIALS; IRRADIATION; OXYGEN; TEMPERATURE RANGE