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Title: Irradiation-induced nano-voids in strained tin precipitates in silicon

We report on self-assembling of spherically shaped voids in nanometer size strained Sn precipitates after irradiation with He{sup +} ions in different conditions. It is found that high-temperature irradiation induces vacancies which are collected by compressively strained Sn precipitates enhancing of out-diffusion of Sn atoms from the precipitates. Nano-voids formation takes place simultaneously with a β- to α-phase transformation in the Sn precipitates. Post-irradiation thermal treatment leads to the removal of voids and a backward transformation of the Sn phase to β-phase. Strain-enhanced separation of point defects along with vacancy assisted Sn out-diffusion and precipitate dissolution are discussed.
Authors:
 [1] ;  [2] ; ;  [1]
  1. Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark)
  2. (Belarus)
Publication Date:
OSTI Identifier:
22262778
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HELIUM IONS; IRRADIATION; PHASE TRANSFORMATIONS; PRECIPITATION; SILICON; STRAINS; TIN; VACANCIES