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Title: Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.
Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581 (Japan)
  2. Research Institute of Electrical Communication, Tohoku University, Miyagi 980-8577 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22262776
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ENERGY LOSSES; EPITAXY; GRAPHENE; PHOTOEMISSION; RELAXATION TIME; SCATTERING; SILICON CARBIDES; SUBSTRATES