Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures
- Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577 (Japan)
- Institute for Physics of Microstructures of Russian Academy of Sciences, and Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod 603950 (Russian Federation)
- Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan)
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 1460-1920 (United States)
- Department of Electrical, Electronics, and System Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
We propose and theoretically substantiate the concept of terahertz and infrared photodetectors using the resonant radiative transitions between graphene layers (GLs) in double-GL structures. The calculated absorption spectrum and the spectral characteristics of the photodetector responsivity exhibit sharp resonant maxima at the photon energies in a wide range. The resonant maxima can be tuned by the applied voltage. We compare the photodetector responsivity with that of the GL p-i-n photodiodes and quantum-well infrared photodetectors. Weak temperature dependences of the photocurrent and dark current enable the effective operation of the proposed photodetector at room temperature.
- OSTI ID:
- 22262773
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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