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Title: Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10{sup −11} W/Hz{sup 0.5} in the unbiased mode of the detector operation.
Authors:
 [1] ; ;  [2] ; ;  [3] ;  [4] ; ; ;  [5] ; ;  [6]
  1. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov 410019 (Russian Federation)
  2. Institute of Microelectronic Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow Region 142432 (Russian Federation)
  3. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation)
  4. (Russian Federation)
  5. National Research University of Electronic Technology, Zelenograd, Moscow 124498 (Russian Federation)
  6. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
Publication Date:
OSTI Identifier:
22262772
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTOVOLTAIC EFFECT; RADIATION DETECTION