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Title: Effects of electrostatic discharge on three cryogenic temperature sensor models

Abstract

Cryogenic temperature sensors are not usually thought of as electrostatic discharge (ESD) sensitive devices. However, the most common cryogenic thermometers in use today are thermally sensitive diodes or resistors - both electronic devices in their base form. As such, they are sensitive to ESD at some level above which either catastrophic or latent damage can occur. Instituting an ESD program for safe handling and installation of the sensor is costly and it is desirable to balance the risk of ESD damage against this cost. However, this risk cannot be evaluated without specific knowledge of the ESD vulnerability of the devices in question. This work examines three types of cryogenic temperature sensors for ESD sensitivity - silicon diodes, Cernox(trade mark, serif) resistors, and wire wound platinum resistors, all manufactured by Lake Shore Cryotronics, Inc. Testing was performed per TIA/EIA FOTP129 (Human Body Model). Damage was found to occur in the silicon diode sensors at discharge levels of 1,500 V. For Cernox(trade mark, serif) temperature sensors, damage was observed at 3,500 V. The platinum temperature sensors were not damaged by ESD exposure levels of 9,900 V. At the lower damage limit, both the silicon diode and the Cernox(trade mark, serif) temperature sensorsmore » showed relatively small calibration shifts of 1 to 3 K at room temperature. The diode sensors were stable with time and thermal cycling, but the long term stability of the Cernox(trade mark, serif) sensors was degraded. Catastrophic failure occurred at higher levels of ESD exposure.« less

Authors:
;  [1]
  1. Lake Shore Cryotronics, 575 McCorkle Blvd., Westerville, OH 43082 (United States)
Publication Date:
OSTI Identifier:
22262718
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1573; Journal Issue: 1; Conference: Cryogenic engineering conference, Anchorage, AK (United States), 17-21 Jun 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CALIBRATION; DAMAGE; ELECTRONIC EQUIPMENT; FAILURES; HAZARDS; INSTALLATION; PLATINUM; RESISTORS; SENSITIVITY; SENSORS; SILICON DIODES; TESTING; THERMAL CYCLING; THERMOMETERS

Citation Formats

Courts, S. Scott, and Mott, Thomas B. Effects of electrostatic discharge on three cryogenic temperature sensor models. United States: N. p., 2014. Web. doi:10.1063/1.4860691.
Courts, S. Scott, & Mott, Thomas B. Effects of electrostatic discharge on three cryogenic temperature sensor models. United States. https://doi.org/10.1063/1.4860691
Courts, S. Scott, and Mott, Thomas B. 2014. "Effects of electrostatic discharge on three cryogenic temperature sensor models". United States. https://doi.org/10.1063/1.4860691.
@article{osti_22262718,
title = {Effects of electrostatic discharge on three cryogenic temperature sensor models},
author = {Courts, S. Scott and Mott, Thomas B.},
abstractNote = {Cryogenic temperature sensors are not usually thought of as electrostatic discharge (ESD) sensitive devices. However, the most common cryogenic thermometers in use today are thermally sensitive diodes or resistors - both electronic devices in their base form. As such, they are sensitive to ESD at some level above which either catastrophic or latent damage can occur. Instituting an ESD program for safe handling and installation of the sensor is costly and it is desirable to balance the risk of ESD damage against this cost. However, this risk cannot be evaluated without specific knowledge of the ESD vulnerability of the devices in question. This work examines three types of cryogenic temperature sensors for ESD sensitivity - silicon diodes, Cernox(trade mark, serif) resistors, and wire wound platinum resistors, all manufactured by Lake Shore Cryotronics, Inc. Testing was performed per TIA/EIA FOTP129 (Human Body Model). Damage was found to occur in the silicon diode sensors at discharge levels of 1,500 V. For Cernox(trade mark, serif) temperature sensors, damage was observed at 3,500 V. The platinum temperature sensors were not damaged by ESD exposure levels of 9,900 V. At the lower damage limit, both the silicon diode and the Cernox(trade mark, serif) temperature sensors showed relatively small calibration shifts of 1 to 3 K at room temperature. The diode sensors were stable with time and thermal cycling, but the long term stability of the Cernox(trade mark, serif) sensors was degraded. Catastrophic failure occurred at higher levels of ESD exposure.},
doi = {10.1063/1.4860691},
url = {https://www.osti.gov/biblio/22262718}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1573,
place = {United States},
year = {Wed Jan 29 00:00:00 EST 2014},
month = {Wed Jan 29 00:00:00 EST 2014}
}