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Title: Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ; ;  [1]
  1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22262639
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; ENERGY GAP; THIN FILMS