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Title: Electronic confinement in modulation doped quantum dots

Modulation doping, an effective way to dope quantum dots (QDs), modifies the confinement energy levels in the QDs. We present a self-consistent full multi-grid solver to analyze the effect of modulation doping on the confinement energy levels in large-area structures containing Si QDs in SiO{sub 2} and Si{sub 3}N{sub 4} dielectrics. The confinement energy was found to be significantly lower when QDs were in close proximity to dopant ions in the dielectric. This effect was found to be smaller in Si{sub 3}N{sub 4}, while smaller QDs in SiO{sub 2} were highly susceptible to energy reduction. The energy reduction was found to follow a power law relationship with the QD size.
Authors:
; ; ; ;  [1]
  1. Australian Centre for Advanced Photovoltaics, UNSW, Sydney 2052 (Australia)
Publication Date:
OSTI Identifier:
22262637
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; DOPED MATERIALS; ENERGY LEVELS; QUANTUM DOTS; SILICON NITRIDES; SILICON OXIDES