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Title: Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes.
Authors:
; ; ; ; ; ; ;  [1]
  1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22262632
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EFFICIENCY; ELECTROLUMINESCENCE; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; QUANTUM WELLS; SAPPHIRE