Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871509· OSTI ID:22262631

Mao, Shimin; Anderson, Daniel D. ^[1]; Shang, Tao ^[2]; Park, Byoungnam ^[1]

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1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
2. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area.

• OSTI ID: 22262631
• Journal Information: Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
HETEROJUNCTIONS
ION BEAMS
JOULE HEATING
SCHOTTKY BARRIER DIODES
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY
ZINC OXIDES