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Title: Investigation of gate leakage mechanism in Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN metal-oxide-semiconductor high-electron-mobility transistors

The mechanism of both reverse and forward gate leakage currents in Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN structures was studied in this Letter by temperature-dependent current-voltage measurement. Poole–Frenkel (PF) emission, an oxygen vacancy-assisted process, was deduced as the dominant mechanism at high-temperatures (>388 K), and the leakage current at mid-temperatures (<388 K) were found greatly impacted by temperature-independent tunneling current. The reverse PF mission current in low-field, mid-field, and high-field region were related to trap states with activation energy of 0.41 eV, 0.49 eV, and 0.71 eV, respectively, and the activation energy of trap states for forward PF emission current was derived as 0.65 eV.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22262622
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; ALUMINIUM OXIDES; ELECTRON MOBILITY; GALLIUM NITRIDES; LEAKAGE CURRENT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; VACANCIES