Single- and bi-layer memristive devices with tunable properties using TiO{sub x} switching layers deposited by reactive sputtering
- Nanodevices and Integrated Systems Laboratory, Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003 (United States)
The authors systematically studied reactive sputtering deposition of TiO{sub x} thin films using a mixture of Ar and O{sub 2} gases under different ratios of O{sub 2} flow. As directly revealed by X-ray photoelectron spectroscopy, the deposition changed from a metallic Ti target mode to an oxide target mode when the O{sub 2} flow ratio was beyond 40%, resulting in TiO{sub x} thin films with different chemical compositions. Consequently, metal/oxide/metal devices with a single TiO{sub x} layer exhibited a broad spectrum of electrical characteristics such as Ohmic, rectifying, and memristive behavior. The reactive sputtering deposited TiO{sub x} thin films were also used in a bilayer memristive device structure, and a transition from bipolar to unipolar switching behavior was observed for devices based on thin films prepared with different oxygen flow.
- OSTI ID:
- 22262620
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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