Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
- Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden)
- Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)
- Department of Physics and Electrical Engineering, Linneaus University, SE-39233 Kalmar (Sweden)
We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (∼0.0001%) exhibit a low resistance of a few kΩ at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga{sub 1−x}Mn{sub x}As nanowires for future nanospintronics.
- OSTI ID:
- 22262615
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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