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Title: Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (∼0.0001%) exhibit a low resistance of a few kΩ at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga{sub 1−x}Mn{sub x}As nanowires for future nanospintronics.
Authors:
; ; ;  [1] ;  [2] ; ;  [1] ; ;  [3] ; ;  [4] ;  [1] ;  [2]
  1. Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden)
  2. (Sweden)
  3. Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)
  4. Department of Physics and Electrical Engineering, Linneaus University, SE-39233 Kalmar (Sweden)
Publication Date:
OSTI Identifier:
22262615
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM ARSENIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; MANGANESE IONS; POLARONS; QUANTUM WIRES; SPIN