skip to main content

SciTech ConnectSciTech Connect

Title: Spin-filtering effect of thin Al{sub 2}O{sub 3} barrier on tunneling magnetoresistance

Tunneling magnetoresistance (TMR) dependence on the Al{sub 2}O{sub 3} barrier thickness was investigated for CoFe/Al{sub 2}O{sub 3}/CoFe magnetic tunnel junctions (MTJs). MTJs with very thin Al{sub 2}O{sub 3} layers were grown by inserting an amorphous FeZr buffer layer whose role is only to reduce the roughness of bottom electrode. The TMR decreased as the thickness of the Al{sub 2}O{sub 3} layer was reduced. The results are analyzed with the dependence of the spin-filtering effect on the Al{sub 2}O{sub 3} thickness. It was found that a simple model of separating sp- and d-like electrons does not work, and it may suggest that the tunneling electrons are in rather hybridized state.
Authors:
 [1] ;  [2] ;  [3] ; ;  [4] ; ; ;  [2] ;  [5]
  1. Center for Electricity and Magnetism, KRISS, Daejeon 305-340 (Korea, Republic of)
  2. Department of Display and Semiconductor Physics, Korea University, Sejong 339-700 (Korea, Republic of)
  3. (Korea, Republic of)
  4. Spintronic Device Research Center, KIST, Seoul 136-791 (Korea, Republic of)
  5. Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22262602
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; MAGNETORESISTANCE; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT