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Title: Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers

CoFe/IrMn bilayers with perpendicular magnetization for various IrMn layer thicknesses exhibit unusual two-step hysteresis loops with both positive and negative loop shifts. Observed at room temperature in the as-grown state, they provide direct evidence of large antiferromagnetic domain formation at the IrMn interface. The exchange bias field reaches 100 mT with an IrMn layer thickness of 4 nm after field annealing at 200 °C–300 °C in 800 mT, which is at least three times as large as the coercivity, and may be useful for reference layers of spin-valves or magnetic tunnel junctions with perpendicular magnetic anisotropy.
Authors:
; ; ;  [1]
  1. School of Physics and CRANN, Trinity College, Dublin 2 (Ireland)
Publication Date:
OSTI Identifier:
22262601
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ANTIFERROMAGNETISM; DEPOSITS; LAYERS; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THICKNESS; TUNNEL EFFECT