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Title: On the reliable analysis of indium mole fraction within In{sub x}Ga{sub 1−x}N quantum wells using atom probe tomography

Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of In{sub x}Ga{sub 1−x}N m-plane, c-plane, and (202{sup ¯}1{sup ¯}) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in In{sub x}Ga{sub 1−x}N quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.
Authors:
;  [1] ; ;  [2]
  1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201 (United States)
  2. Future Chips Constellation and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Publication Date:
OSTI Identifier:
22262595
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; CRYSTALLOGRAPHY; GALLIUM NITRIDES; INDIUM; NITROGEN IONS; QUANTUM WELLS; SURFACES; TOMOGRAPHY