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Title: Stacking faults and interface roughening in semipolar (202{sup ¯}1{sup ¯}) single InGaN quantum wells for long wavelength emission

The microstructure of InGaN single quantum wells (QWs) grown in semipolar (202{sup ¯}1{sup ¯}) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In{sub x}Ga{sub 1−x}N layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [2] ;  [3]
  1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  2. (Russian Federation)
  3. (Estonia)
Publication Date:
OSTI Identifier:
22262590
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DISLOCATIONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; MICROSTRUCTURE; QUANTUM WELLS; STACKING FAULTS; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTHS