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Title: Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300‚ÄČK. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
  2. Department of Applied Physics and Department of Bionanotechnology, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
  3. Department of Applied Physics and Electronics, Sangji University, Wonju, Gangwon-do 220-702 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22262587
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTROLUMINESCENCE; GALLIUM NITRIDES; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; RECOMBINATION; TEMPERATURE DEPENDENCE