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Title: Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.
Authors:
;  [1] ;  [2]
  1. Nonlinear Control Strategies, Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705, USA and Optical Sciences Center, University of Arizona, Tucson, Arizona 85721 (United States)
  2. Department of Physics and Materials Sciences Center, Philipps Universit├Ąt Marburg, Renthof 5, 35032 Marburg (Germany)
Publication Date:
OSTI Identifier:
22262583
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MANY-BODY PROBLEM; PHONONS; PULSES; QUANTUM WELLS; SCATTERING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS