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Title: Band gap effects of hexagonal boron nitride using oxygen plasma

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.
Authors:
;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [1] ;  [2]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  2. (Singapore)
  3. Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  4. (United States)
Publication Date:
OSTI Identifier:
22262579
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; LAYERS; OXYGEN; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY