Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

Journal Article · Mon Apr 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4873336· OSTI ID:22262570

Xing, Juanjuan ^[1]; Takeguchi, Masaki ^[2]; Hashimoto, Ayako ^[2]; Cao, Junyu; Ye, Jinhua ^[3]

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1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
2. Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
3. International Center for Materials Nanoarchitectonics (WPI-MANA), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

Photovoltaic behavior of a CaFe{sub 2}O{sub 4}/ZnFe{sub 2}O{sub 4} p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

• OSTI ID: 22262570
• Journal Information: Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CALCIUM
HETEROJUNCTIONS
HOLOGRAPHY
IRON
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
ZINC