skip to main content

Title: Lattice-matched AlInN in the initial stage of growth

We investigated the dependence of the indium content of tenfold Al{sub 1−x}In{sub x}N/GaN superlattice structures grown by metal organic vapor phase epitaxy on layer thickness and strain state. Growth conditions taken from a thick lattice-matched reference sample with an indium content of about 18% lead to reduced indium contents from 3% for 0.5 nm of Al{sub 1−x}In{sub x}N to 16.5% for 5.0 nm, respectively. There is no evidence for dependences of the indium incorporation on the lattice mismatch between the Al{sub 1−x}In{sub x}N and the subjacent layer. Additional supply of trimethylindium only shows a very slight, almost negligible influence on the indium content of these superlattice structures. Finally, we present a model explaining the behavior of the indium content of the Al{sub 1−x}In{sub x}N layer assuming the growth of an indium depleted phase in the initial stage of growth.
Authors:
; ; ;  [1]
  1. Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstraße 2, 38106 Braunschweig (Germany)
Publication Date:
OSTI Identifier:
22262567
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; GALLIUM NITRIDES; INDIUM; LAYERS; VAPOR PHASE EPITAXY