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Title: Impact ionization in Al{sub x}Ga{sub 1−x}As{sub y}Sb{sub 1−y} avalanche photodiodes

Avalanche photodiodes (APDs) have been fabricated in order to determine the impact ionization coefficients of electrons (α) and holes (β) in Al{sub x}Ga{sub 1−x}As{sub y}Sb{sub 1−y} lattice matched to GaSb for three alloy compositions: (x = 0.40, y = 0.035), (x = 0.55, y = 0.045), and (x = 0. 65, y = 0.054). The impact ionization coefficients were calculated from photomultiplication measurements made on specially designed APDs, which allowed for both pure electron and pure hole injection in the same device. Photo-multiplication measurements were made at temperatures ranging from 77 K to 300 K for all three alloys. A quasi-physical model with an explicit temperature dependence was used to express the impact ionization coefficients as a function of electric-field strength and temperature. For all three alloys, it was found that α < β at any given temperature. In addition, the values of the impact ionization coefficients were found to decrease as the aluminum concentration of the AlGaAsSb alloy was increased. A value between 1.2 and 4.0 was found for β/α, which is dependent on temperature, alloy composition, and electric-field strength.
Authors:
; ; ; ; ; ; ;  [1]
  1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)
Publication Date:
OSTI Identifier:
22262566
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ALUMINIUM; GALLIUM ANTIMONIDES; PHOTODIODES; TEMPERATURE DEPENDENCE; X-RAY SPECTROSCOPY