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Title: Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

Abstract

We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10 nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of −18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

Authors:
; ;  [1];  [2];  [3];  [1]
  1. Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan)
  2. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)
  3. Department of Physics, University of Rajasthan, Jaipur, Rajasthan 302005 (India)
Publication Date:
OSTI Identifier:
22262565
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; ION BEAMS; IRON SILICIDES; QUANTUM DOTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Cassidy, Cathal, Singh, Vidyadhar, Grammatikopoulos, Panagiotis, Kioseoglou, Joseph, Lal, Chhagan, Sowwan, Mukhles, and Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering. United States: N. p., 2014. Web. doi:10.1063/1.4872315.
Cassidy, Cathal, Singh, Vidyadhar, Grammatikopoulos, Panagiotis, Kioseoglou, Joseph, Lal, Chhagan, Sowwan, Mukhles, & Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering. United States. https://doi.org/10.1063/1.4872315
Cassidy, Cathal, Singh, Vidyadhar, Grammatikopoulos, Panagiotis, Kioseoglou, Joseph, Lal, Chhagan, Sowwan, Mukhles, and Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine. 2014. "Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering". United States. https://doi.org/10.1063/1.4872315.
@article{osti_22262565,
title = {Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering},
author = {Cassidy, Cathal and Singh, Vidyadhar and Grammatikopoulos, Panagiotis and Kioseoglou, Joseph and Lal, Chhagan and Sowwan, Mukhles and Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine},
abstractNote = {We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10 nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of −18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.},
doi = {10.1063/1.4872315},
url = {https://www.osti.gov/biblio/22262565}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 104,
place = {United States},
year = {Mon Apr 21 00:00:00 EDT 2014},
month = {Mon Apr 21 00:00:00 EDT 2014}
}