skip to main content

Title: Effects of thermal annealing process on the electrical properties of p{sup +}-Si/n-SiC heterojunctions

The effects of thermal annealing process on the interface in p{sup +}-Si/n-SiC heterojunctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current and the ideality factor decreased to 2.98 × 10{sup −6} mA/cm{sup 2} and 1.03, respectively, by annealing the junctions at 1000 °C. Observation by using transmission electron microscopy indicates that an amorphous layer with a thickness of ∼6 nm is formed at the unannealed interface, which vanishes after annealing at 1000 °C. No structural defects at the interface are observed even after annealing at such a high temperature.
Authors:
; ;  [1] ;  [2]
  1. Department of Electrical Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 (Japan)
  2. New Japan Radio Co., Ltd., Fukuoka 2-1-1, Fujimino, Saitama 356-8510 (Japan)
Publication Date:
OSTI Identifier:
22262564
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BONDING; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; PHOSPHORUS IONS; SILICON CARBIDES; TRANSMISSION ELECTRON MICROSCOPY