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Title: Magnetoelectric transport and quantum interference effect in ultrathin manganite films

The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La{sub 0.9}Sr{sub 0.1}MnO{sub 3}, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22262557
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRICAL INSULATORS; ELECTRICAL PROPERTIES; MAGNETIC PROPERTIES; METALS; PHASE TRANSFORMATIONS; TEMPERATURE RANGE 0065-0273 K; THICKNESS; THIN FILMS