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Title: Energy band line-up of atomic layer deposited Al{sub 2}O{sub 3} on β-Ga{sub 2}O{sub 3}

Electrical properties of atomic layer deposited Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface were investigated. We determined the conduction band offset and interface charge density of Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface by analyzing the capacitance-voltage characteristics. The conduction band offset at the Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface was found to be 1.7 eV. A large positive sheet charge density of 3.6 × 10{sup 12} cm{sup −2} is induced at the Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface, which caused a non-zero field of 0.7 MV/cm in the Al{sub 2}O{sub 3} under flat-band conditions in the β-Ga{sub 2}O{sub 3}. The forward current-voltage characteristics were found to be related to trap-assisted tunneling.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Tamura Corporation, 2–3–1 Hirosedai, Sayama, Saitama 350–1328 (Japan)
Publication Date:
OSTI Identifier:
22262556
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CAPACITANCE; CHARGE DENSITY; DEPOSITION; GALLIUM OXIDES; LAYERS; TUNNEL EFFECT