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Title: Controlled synthesis and decoupling of monolayer graphene on SiC(0001)

We describe a process for the growth of a single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow a single graphene layer, and (3) electronically decouple the graphene from the substrate. This approach uses a single process gas, at ╬╝Torr pressures, with modest substrate temperatures, thus affecting a drastic simplification over other processes described in the literature.
Authors:
; ;  [1]
  1. IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
22262552
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; GRAPHENE; LAYERS; SILANES; SILICON CARBIDES; SUBSTRATES