Controlled synthesis and decoupling of monolayer graphene on SiC(0001)
- IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
We describe a process for the growth of a single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow a single graphene layer, and (3) electronically decouple the graphene from the substrate. This approach uses a single process gas, at μTorr pressures, with modest substrate temperatures, thus affecting a drastic simplification over other processes described in the literature.
- OSTI ID:
- 22262552
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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