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Title: Franz-Keldysh effect in GeSn pin photodetectors

The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V.
Authors:
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  1. Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
22262542
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTONS; TIN