Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
- LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research - A-STAR, Singapore 117602 (Singapore)
A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentally and theoretically. In the proposed structure, the electron leakage is found to be effectively reduced, while the hole injection efficiency is simultaneously increased significantly, hence enabling a greatly enhanced radiative recombination rate within the active region. As a result, improvements of 12.25% in the optical output power and 11.98% in the external quantum efficiency are obtained from the proposed device with the respect to the reference device.
- OSTI ID:
- 22262541
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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